75 a 95 a add-a-pak tm gen v power modules thyristor/ diode and thyristor/ thyristor irk.71, .91 series bulletin i27132 rev. i 09/04 1 www.irf.com parameters irk.71 irk.91 units i t(av) or i f(av) @ 85c i o(rms) (*) 165 210 a i tsm @ 50hz 1665 1785 a i fsm @ 60hz 1740 1870 a i 2 t @ 50hz 13.86 15.91 ka 2 s @ 60hz 12.56 14.52 ka 2 s i 2 t 138.6 159.1 ka 2 s v rrm range 400 to 1600 v t stg - 40 to 125 o c t j - 40 to125 o c (*) as ac switch. 75 95 a major ratings and characteristics features high voltage industrial standard package thick al metal die and double stick bonding thick copper baseplate ul e78996 approved 3500v rms isolating voltage mechanical description the generation v of add-a-pak module combine the excellent thermal performance obtained by the usage of direct bonded copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device. the cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. the generation v of aap module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. benefits up to 1600v full compatible to-240aa high surge capability easy mounting on heatsink al 2 0 3 dbc insulator heatsink grounded electrical description these modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, ups and battery charger. the electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other ir modules.
irk.71, .91 series 2 bulletin i27132 rev. i 09/04 www.irf.com on-state conduction i t(av) max. average on-state current (thyristors) 180 o conduction, half sine wave, i f(av) max. average forward t c = 85 o c current (diodes) i o(rms ) max. continuous rms on-state current. 165 210 as ac switch i tsm max. peak, one cycle 1665 1785 t=10ms no voltage or non-repetitive on-state 1740 1870 t=8.3ms reapplied i fsm or forward current 1400 1500 t=10ms 100% v rrm 1470 1570 t=8.3ms reapplied 1850 2000 t=10ms t j = 25 o c, 1940 2100 t=8.3ms no voltage reapplied i 2 t max. i 2 t for fusing 13.86 15.91 t=10ms no voltage 12.56 14.52 t=8.3ms reapplied 9.80 11.25 t=10ms 100% v rrm 8.96 10.27 t=8.3ms reapplied 17.11 20.00 t=10ms t j = 25 o c, 15.60 18.30 t= 8.3ms no voltage reapplied i 2 t max. i 2 t for fusing (1) 138.6 159.1 ka 2 s t=0.1 to 10ms, no voltage reapplied,t j = t j max v t(to) max. value of threshold 0.82 0.80 low level (3) voltage (2) 0.85 0.85 high level (4) r t max. value of on-state 3.00 2.40 low level (3) slope resistance (2) 2.90 2.25 high level (4) v tm max. peak on-state or i tm = x i t(av) v fm forward voltage i fm = x i f(av) di/dt max. non-repetitive rate t j = 25 o c, from 0.67 v drm , of rise of turned on 150 a/s i tm = x i t(av) , i g = 500ma, current t r < 0.5 s, t p > 6 s i h max. holding current 2 5 0 t j = 2 5 o c, anode supply = 6v, resistive load, gate open circuit i l max. latching current 400 t j = 25 o c, anode supply = 6v, resistive load parameters irk.71 irk.91 units conditions initial t j = t j max. a ka 2 s v m ? 1.59 1.58 v ma or i (rms) i (rms) electrical specifications voltage ratings type number v rrm , maximum v rsm , maximum v drm , max. repetitive i rrm voltage repetitive non-repetitive peak off-state voltage, i drm code peak reverse voltage peak reverse voltage gate open circuit 125c -v v vma 04 400 500 400 06 600 700 600 08 800 900 800 irk.71/ .91 10 1000 1100 1000 15 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 sinusoidal half wave, initial t j = t j max. 75 95 t j = t j max t j = t j max t j = 25c (1) i 2 t for time t x = i 2 t x t x (2) average power = v t(to) x i t(av) + r t x (i t(rms) ) 2 (3) 16.7% x x i av < i < x i av (4) i > x i av
irk.71, .91 series 3 bulletin i27132 rev. i 09/04 www.irf.com i rrm max. peak reverse and i drm off-state leakage current at v rrm , v drm 2500 (1 min) 50 hz, circuit to base, all terminals 3500 (1 sec) shorted dv/dt max. critical rate of rise t j = 125 o c, linear to 0.67 v drm , of off-state voltage (5) gate open circuit t j junction operating temperature range t stg storage temp. range - 40 to 125 r thjc max. internal thermal resistance, junction 0.165 0.135 per module, dc operation to case r thcs typical thermal resistance case to heatsink t mounting torque 10% to heatsink busbar 3 wt approximate weight 110 (4) gr (oz) case style to-240aa jedec 15 ma t j = 125 o c, gate open circuit thermal and mechanical specifications 500 v/ s parameters irk.71 irk.91 units conditions - 40 to 125 0.1 5 triggering blocking (5) available with dv/dt = 1000v/ s, to complete code add s90 i.e. irkt91/16as90. a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound k/w nm mounting surface flat, smooth and greased v ins rms isolation voltage v p gm max. peak gate power 12 12 p g(av) max. average gate power 3.0 3.0 i gm max. peak gate current 3.0 3.0 a -v gm max. peak negative gate voltage v gt max. gate voltage 4.0 t j = - 40c required to trigger 2.5 t j = 25c 1.7 t j = 125c i gt max. gate current 270 t j = - 40c required to trigger 150 ma t j = 25c 80 t j = 125c v gd max. gate voltage t j = 125 o c, that will not trigger rated v drm applied i gd max. gate current t j = 125 o c, that will not trigger rated v drm applied parameters irk.71 irk.91 units conditions 0.25 v 6ma w v 10 anode supply = 6v resistive load anode supply = 6v resistive load c parameters irk.71 irk.91 units conditions sine half wave conduction rect. wave conduction devices units 180 o 120 o 90 o 60 o 30 o 180 o 120 o 90 o 60 o 30 o irk.71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18 irk.91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 c/w ? r conduction (per junction) (the following table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc)
irk.71, .91 series 4 bulletin i27132 rev. i 09/04 www.irf.com outline table dimensions are in millimeters and [inches] irk t 91 / 16 a s90 device code 1 2 34 5 1 - module type 2 - circuit configuration (see circuit configuration table below) 3 - current code * * 4 - voltage code (see voltage ratings table) 5 - a : gen v 6 - dv/dt code: s90 = dv/dt 1000 v/s no letter = dv/dt 500 vs ordering information table 6 * * available with no auxiliary cathode. to specify change: 71 to 72 91 to 92 e.g. : irkt92/16a etc. irk.92 types with no auxiliary cathode note: to order the optional hardware see bulletin i27900 + k2 g2 - k1 g1 ~ (1) (2) (3) (4) (5) (7) (6) + - k1 g1 ~ (1) (2) (3) (4) (5) + - ~ (1) (2) (3) k2 (7) g2 (6) irkt irkh irkl irkn
irk.71, .91 series 5 bulletin i27132 rev. i 09/04 www.irf.com fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 70 80 90 100 110 120 130 0 1020304050607080 maximum allowable case temperature (c) 30 60 90 120 180 average on-state current (a) co nd uc tion ang le irk.71.. series r (dc) = 0.33 k/ w thjc 70 80 90 100 110 120 130 0 20 40 60 80 100 120 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period irk.71.. series r (dc) = 0.33 k/ w thjc fig. 3 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 4 - on-state power loss characteristics 0 20 40 60 80 100 120 0 1020304050607080 180 120 90 60 30 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) irk.71.. series pe r ju n c t io n t = 125c j 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) irk.71.. series pe r ju n c t i o n t = 125c j 700 800 900 1000 1100 1200 1300 1400 1500 1600 1 10 100 number of equal amplitude half cycle current pulses (n) pe a k ha lf sine wa ve on-sta t e cu rre nt (a) init ia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any ra ted loa d condition and with rated v applied following surge. rrm irk.71.. s eries per junc tion 600 800 1000 1200 1400 1600 1800 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) initia l t = 125c no voltage reapplied rated v reapplied of conduction may not be maintained. rrm j maximum non repetitive s urge current versus pulse train duration. control irk.71.. se rie s per junction
irk.71, .91 series 6 bulletin i27132 rev. i 09/04 www.irf.com fig. 9 - on-state power loss characteristics fig. 8 - on-state power loss characteristics 0 20 40 60 80 100 120 140 maximum allowable ambient temperature (c) r = 0.1 k/ w - d e lt a r t h s a 0 . 3 k / w 0 . 5 k / w 1 k / w 2 k / w 0 . 2 k / w 0 100 200 300 400 500 600 0 20 40 60 80 100 120 140 160 180 total output current (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x irk.71.. series s ingle phase bridge connected t = 125c j 0 20 40 60 80 100 120 140 maximum allowable ambient temperature (c) 1 k / w 0 . 5 k / w 0 . 3 k / w r = 0 . 1 k / w - d e l t a r 0 . 2 k / w t h s a 0 100 200 300 400 500 600 700 800 0 40 80 120 160 200 240 total output current (a) maximum total power loss (w) 120 (rect) 3 x irk.71.. series th re e ph a se bri d g e connected t = 125c j fig. 7 - on-state power loss characteristics 0 20 40 60 80 100 120 140 maximum allowable ambient temperature (c) r = 0 . 1 k / w - d e l t a r t h s a 3 k / w 1 . 5 k / w 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 4 k / w 0 . 3 k / w 0 . 2 k / w 0 50 100 150 200 250 0 20 40 60 80 100 120 140 160 180 180 120 90 60 30 to t a l rm s output current (a) maximum total on-state power loss (w) conduction angle irk.71.. s eries pe r m o d u l e t = 1 2 5 c j
irk.71, .91 series 7 bulletin i27132 rev. i 09/04 www.irf.com fig. 11 - current ratings characteristics fig. 10 - current ratings characteristics 70 80 90 100 110 120 130 0 20406080100 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) cond uction angle irk.91.. series r (dc) = 0.27 k/ w thjc 70 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period irk.91.. series r (dc) = 0.27 k/ w thjc fig. 14 - maximum non-repetitive surge current fig. 15 - maximum non-repetitive surge current fig. 13 - on-state power loss characteristics fig. 12 - on-state power loss characteristics 0 20 40 60 80 100 120 140 0 20406080100 rm s li m i t conduc tion angle maximum average on-state power loss (w) average on-state current (a) 180 120 90 60 30 irk.91.. series pe r ju n c t i o n t = 125c j 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) irk.91.. se rie s pe r ju n c t i o n t = 125c j 700 800 900 1000 1100 1200 1300 1400 1500 1600 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) init ial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm irk.91.. se rie s per junction 600 800 1000 1200 1400 1600 1800 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) versus pulse train duration. control initia l t = 125c no voltage reapplied rated v reapplied rrm j of conduction may not be maintained. ma xim um no n re p etitive surg e curre nt irk.91.. se rie s per junction
irk.71, .91 series 8 bulletin i27132 rev. i 09/04 www.irf.com fig. 17 - on-state power loss characteristics fig. 18 - on-state power loss characteristics 0 20 40 60 80 100 120 140 maximum allowable ambient temperature (c) 0 . 5 k / w 0 . 3 k / w 0 . 2 k / w r = 0 . 1 k / w - d e l t a r 1 k / w 2 k / w t h s a 0 100 200 300 400 500 600 0 40 80 120 160 200 total output current (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x irk.91.. s eries single phase bridge connected t = 125c j 0 20 40 60 80 100 120 140 maximum allowable ambient temperature (c) 0 . 5 k / w 1 k / w 0 . 3 k / w 0 . 2 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 100 200 300 400 500 600 700 800 900 0 40 80 120 160 200 240 280 total output current (a) maximum total power loss (w) 120 (rect) 3 x irk.91.. series three phase bridge connected t = 125c j fig. 16 - on-state power loss characteristics 0 20 40 60 80 100 120 140 maximum allowable ambient temperature (c) 1 . 5 k / w 3 k / w 1 k / w 0 . 7 k / w 0 . 5 k / w 0 . 3 k / w 0 . 2 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 50 100 150 200 250 300 350 0 40 80 120 160 200 240 180 120 90 60 30 total rms output current (a) maximum total on-state power loss (w) conduction angle irk.91.. serie s pe r m o d ule t = 1 2 5 c j
irk.71, .91 series 9 bulletin i27132 rev. i 09/04 www.irf.com fig. 19 - on-state voltage drop characteristics fig. 20 - on-state voltage drop characteristics 1 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j irk.91.. series pe r ju n c t io n 1 10 100 1000 0.511.522.533.54 t = 2 5 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j irk.71.. series per junction fig. 23 - thermal impedance z thjc characteristics fig. 22 - recovery current characteristics fig. 21 - recovery charge characteristics 20 40 60 80 100 120 140 10 20 30 40 50 60 70 80 90 100 ma ximum re verse re co very curre nt - irr (a) rate of fall of forward current - di/dt (a/s) 100 a 50 a i = 200 a t m 20 a 10 a irk.71.. series irk.91.. series t = 125 c j 100 200 300 400 500 600 700 10 20 30 40 50 60 70 80 90 100 100 a 50 a rate of fall of on-state current - di/dt (a/s) maximum reverse rec overy charge - qrr (c) i = 200 a tm 20 a 10 a irk.71.. se rie s irk.91.. se rie s t = 125 c j 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc transient thermal impedance z (k/w) pe r ju n c t io n steady s tate value: r = 0.33 k/ w r = 0.27 k/ w (dc operation) irk.71.. series irk.91.. series thjc thjc
irk.71, .91 series 10 bulletin i27132 rev. i 09/04 www.irf.com fig. 24 - gate characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) rectangular gate pulse (4) (3) (2) (1) instantaneous gate current (a) instantaneous gate voltage (v) tj = -40 c tj = 2 5 c tj = 125 c a)recommended load line for b)recommended load line for vgd igd frequency limited by pg(av) (1) pgm = 200 w, tp = 300 s (2) pgm = 60 w, tp = 1 ms (3) pgm = 30 w, tp = 2 ms (4) pgm = 12 w, tp = 5 ms <= 30% ra te d d i/ d t: 15 v, 40 o hms tr = 1 s, tp >= 6 s ra te d d i/ d t: 20 v, 20 o hms tr = 0.5 s, tp >= 6 s irk.71../ .91.. s eries ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 09/04 data and specifications subject to change without notice. this product has been designed and qualified for industrial level. qualification standards can be found on ir's web site.
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